Assessing fidelity-limiting factors and achieving single-qubit gate fidelity beyond 99.999% in driven silicon spin qubits
π arXiv:2608.11072 Β· π₯ PDF Β· 2026-08-11 Β· quant-ph
Authors: Kenta Takeda [arXiv Β· scholar] , Akito Noiri [arXiv Β· scholar] , Takashi Nakajima [arXiv Β· scholar] , Leon C. Camenzind [arXiv Β· scholar] , Takashi Kobayashi [arXiv Β· scholar] , Giordano Scappucci [arXiv Β· scholar] , Seigo Tarucha [arXiv Β· scholar]
π Abstract
In semiconductor single-spin qubits, high-fidelity quantum gates have been demonstrated; however, achieving consistent performance remains challenging due to variations in driven qubit coherence, which is less explored than free-evolution coherence such as $T_2^*$. Here, we report single-qubit gate fidelities above 99.999%, achieved by dramatically extending the driven-spin coherence time and suppressing off-resonant driving effects that are detrimental to accurate fidelity benchmarking. We demonstrate that removing proximal reservoirs significantly enhances the spin-locking coherence time ($T_{1Ο}$), a critical metric for qubits under microwave driving. Furthermore, we reveal that in typical spin qubit setups using parity readout and rectangular pulses, off-resonant excitation of neighboring qubits causes substantial benchmarking artifacts. By optimizing device conditions to mitigate microwave-induced degradation and implementing spectrally tailored pulse shaping, we achieve a $Ο/2$ gate fidelity of 99.99920(2)%, with remaining errors primarily limited by incoherent noise. These results showcase the mechanisms that bound fidelity benchmarking in state-of-the-art silicon spin qubits and provide practical guidelines for achieving and verifying high fidelities in these systems.