AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots
π arXiv:2608.24495 Β· π₯ PDF Β· 2026-08-25 Β· quant-ph
Authors: Rohan Radhakrishnan [arXiv Β· scholar] , Rodion Reznik [arXiv Β· scholar] , Gilles Patriarche [arXiv Β· scholar] , Igor Ilkiv [arXiv Β· scholar] , Konstantin Kotlyar [arXiv Β· scholar] , Anna Andreeva [arXiv Β· scholar] , George Cirlin [arXiv Β· scholar] , Nika Akopian [arXiv Β· scholar]
π Abstract
Optical quantum dots (QDs) are central to photonic quantum technologies, with fabrication approaches tailored to different spectral ranges. A key challenge, however, is the realization of a unified platform$\unicode{x2014}$a single growth method combined with a host material offering a designable architecture$\unicode{x2014}$enabling wavelength tunability across the full emission range and co-integration of multiple quantum dots. Here, we introduce AlGaAs nanowires as a universal host for GaAs, InGaAs, and InAs QDs. Building on our previous demonstration of high-quality GaAs QDs, we realize InGaAs QDs with tunable emission by varying the growth duration from 2 to 5 s, achieving emission at 780 and 920 nm. We further showcase the platform's versatility for multi-quantum-dot devices by co-integrating two InGaAs QDs, as well as GaAs and InGaAs QDs within a single nanowire. Finally, we initiate a first step toward pure InAs QDs by growing a pristine InAs segment on AlGaAs nanowires, demonstrating material compatibility.